PART |
Description |
Maker |
89C1632RPQE-25 89C1632RPQH-25 89C1632RPQK-25 89C16 |
16 Megabit (512K x 32-Bit) MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 25 ns, CQFP68 16 Megabit (512K x 32-Bit) MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 30 ns, CQFP68 16 Megabit (512K x 32-Bit) MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CQFP68 16 Megabit (512K x 32-Bit) MCM SRAM 16兆位12k × 32的位)立方米的SRAM
|
Maxwell Technologies, Inc
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79C0408 79C0408RT2FH-15 79C0408RT2FK-15 79C0408RT2 |
4 Megabit (512k x 8-bit) EEPROM MCM 512K X 8 EEPROM 5V MODULE, 200 ns, DFP40 4 Megabit (512k x 8-bit) EEPROM MCM 512K X 8 EEPROM 5V MODULE, 120 ns, DFP40 4 Megabit EEPROM MCM 512K X 8 EEPROM 5V MODULE, 150 ns, DFP40 4 Megabit EEPROM MCM
|
Maxwell Technologies, Inc
|
AM29F040-90PCB AM29F040-90FCB AM29F040-90ECB AM29F |
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PDSO32 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PQCC32 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PDIP32 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 4兆位24,288 × 8位)的CMOS 5.0伏只,扇区擦除闪 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 150 ns, PDIP32 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 55 ns, PDSO32 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
AM29F040B-120EF AM29F040B-120EK AM29F040B-120ED AM |
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 4兆位12亩8位)的CMOS 5.0伏只,统一部门快闪记忆 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 120 ns, PDIP32 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 120 ns, PQCC32 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PDIP32 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 55 ns, PDSO32
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
AM29F040B AM29F040B-70 29F040 AM29F040B-90PIB AM29 |
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 55 ns, PQCC32 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 4兆位12亩8位)的CMOS 5.0伏只,统一部门快闪记忆 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 55 ns, PDSO32 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 70 ns, PDSO32 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 150 ns, PQCC32 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PDSO32 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PQCC32 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Uniform Sector Flash Memory 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only/ Uniform Sector Flash Memory
|
ADVANCED MICRO DEVICES INC Advanced Micro Devices, Inc. AMD[Advanced Micro Devices]
|
79C2040RPFK-20 79C2040 79C2040RPFE-15 79C2040RPFE- |
20 Megabit (512K x 40-Bit) EEPROM MCM
|
MAXWELL[Maxwell Technologies]
|
79C0408RT4FH12 79C0408RT4FH15 79C0408RT4FH20 79C04 |
4 megabit (512k x 8-bit) EEPROM MCM
|
Maxwell Technologies
|
89C1632RPQK-30 89C1632 89C1632RPQE-20 89C1632RPQE- |
16 Megabit (512K x 32-Bit) MCM SRAM
|
MAXWELL[Maxwell Technologies]
|
AM29F400AB-65EC AM29F400AB-65EI AM29F400AB-65FC AM |
Dual Retriggerable Monostable Multivibrators 16-SO -40 to 85 512K X 8 FLASH 5V PROM, 60 ns, PDSO48 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 120 ns, PDSO48 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 4兆位24,288 x 8-Bit/26244 x 16位).0伏的CMOS只,扇区擦除闪存 4 Megabit (524/288 x 8-Bit/262/144 x 16-Bit) CMOS 5.0 Volt-only/ Sector Erase Flash Memory Dual Retriggerable Monostable Multivibrators 16-TVSOP -40 to 85 Dual Retriggerable Monostable Multivibrators 16-SOIC -40 to 85 4 Megabit (524,288x8-bit/262, 144x16 bit) CMOS 5.0Volt-only, sector erase flash memory
|
AMD Advanced Micro Devices, Inc.
|
PDM31096SA8TTY PDM31096SA8TTR PDM31096SA8SOTR PDM3 |
4 megabit 3.3V static RAM 512K x 8-bit revolutionary pinout
|
PARADIGM
|
EN29LV040A-70RSIP EN29LV040A-45RJIP EN29LV040A-70R |
4 Megabit (512K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
|
Eon Silicon Solution Inc. Eon Silicon Solution In...
|
AM27C04099 AM27C040-120PC |
512K X 8 OTPROM, 120 ns, PDIP32 4 Megabit (512 K x 8-Bit) CMOS EPROM
|
SPANSION LLC Advanced Micro Devices
|
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